Form factor | M.2 2280 |
Memory size | 500 ГБ |
Type of memory cells | V-NAND MLC |
Interface | PCIe 3.0 x4 |
NVME | Support for NVMe protocol |
Controller | Samsung Phoenix |
Reading speed | 3400 |
Recording speed | 2300 |
Recording resource (TBW) | 300 |
Time -leaning time for refusal | 1.5 млн |
Shock resistance | 1500 |
Power consumption | 5.7 ср |
Working temperature | От 0 до 70 |
Storage temperature | От −40 до +85 |
Additionally |
Samsung 512 MB Low Power DDR4 SDRAM GC (Garbage Collection) technology supported AES 256-bit encryption (class 0) TCG/Opal IEEE1667 Random read (4 KB, QD32): up to 370,000 IOPS< br>Random Read (4 KB, QD1): up to 15,000 IOPS Random Write (4 KB, QD32): up to 450,000 IOPS Random Write (4 KB, QD1): up to 50,000 IOPS |
Dimensions | 80.15 x 22.15 x 2.38 |
The weight | 8 |
Equipment | SSD drive |
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